Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications

Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications

Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In ...

Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

Silicon Carbide “super” Junction Transistors Operating at 500 °c

1200 V/ 3 mm active-area SiC “Super” Junction Transistors (SJTs) display current gains as high as 88 and majority carrier operation up to 250 °C. The SJT operation shifts from purely unipolar to bipolar-mode at temperatures ≥ 300 °C. The leakage currents at a blocking voltage of 1200 V remain below 100 μA, even at 325 °C. Temperature-independent turn-on and turn-off times < 15 ns are measured u...

High Temperature Bipolar SiC Power Integrated Circuits

In the recent decade, integrated electronics implemented using wide bandgap semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have been shown to be viable candidates in extreme environments (e.g high-temperature and high radiation). Such electronics have applications in down-hole drilling, automobile-, airand spaceindustries. In this thesis, integrated circuits ...

Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

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